Temperature dependent resistivity and Hall effect in proton irradiated CdS thin films

被引：0

作者：

Ion, L. ^{[1
]}

Ghenescu, V. ^{[2
]}

Iftimie, S. ^{[1
]}

Antohe, V. A. ^{[1
]}

Radu, A. ^{[1
]}

Gugiu, M. ^{[3
]}

Velisa, G. ^{[3
]}

Porumb, O. ^{[1
]}

Antohe, S. ^{[1
]}

机构：

[1] Univ Bucharest, Fac Phys, Magurele Ilfov, Romania

[2] Inst Space Sci, Magurele Ilfov, Romania

[3] Horia Hulubei Natl Inst Phys & Nucl Engn, Magurele Ilfov 077125, Romania

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 08期

关键词：

Polycrystalline thin films; Cadmium sulfide; Hall effect; Proton irradiation; SOLAR-CELL; IONIZING-RADIATIONS; OPTICAL-PROPERTIES; DEFECTS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations change their performances. We have investigated the effects of irradiation with high energy protons (3 MeV), at 10(14) fluency, on electrical properties of polycrystalline CdS thin layers The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two-band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060 eV. The possible origin of this defect is discussed.

引用

页码：1114 / 1117

页数：4

共 11 条

[1]

Antohe S, 2007, J OPTOELECTRON ADV M, V9, P1382

[2]

Ghenescu V, 2009, OPTOELECTRON ADV MAT, V3, P1023

[3] Comparative study of nano-structured CdS thin films prepared by CBD and spray pyrolysis: Annealing effect [J].