Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

被引：41

作者：

Dowd, P

Johnson, SR

Feld, SA

Adamcyk, M

Chaparro, SA

Joseph, J

Hilgers, K

Horning, MP

Shiralagi, K

Zhang, YH

机构：

[1] Lytek Corp, Phoenix, AZ 85034 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 13期

关键词：

D O I：

10.1049/el:20030664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature continuous-wave operation of antimonide-based long wavelength VCSELs is demonstrated, with 1.2 mW power output at 1266 nm, the highest figure reported so far using this material system. Singlemode powers of 0.3 mW at 10degreesC and 0.1 mW at 70degreesC and sidemode suppression ratios up to 42 dB are also achieved.

引用

收藏

页码：987 / 988

页数：2

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