rGO decorated BiVO4/Cu2O n-n heterojunction photoanode for photoelectrochemical water splitting

被引:50
作者
Bai, Shouli [1 ]
Han, Jingyi [1 ]
Zhao, Yingying [1 ]
Chu, Haomiao [1 ]
Wei, Shiqiang [2 ,3 ]
Sun, Jianhua [2 ]
Sun, Lixia [2 ]
Luo, Ruixian [1 ]
Li, Dianqing [1 ]
Chen, Aifan [1 ]
机构
[1] Beijing Univ Chem Technol, Beijing Key Lab Environm Harmful Chem Anal, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
[2] Guangxi Univ, Sch Chem & Chem Engn, Guangxi Key Lab Petrochem Resource Proc & Proc In, Nanning 530004, Peoples R China
[3] Chinalco Guangxi Guosheng Rare Earth Dev Co Ltd, Chongzuo 532200, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
Photoelectrochemical water splitting; Bismuth vanadate; Cuprous oxide; n-n heterojunctions; Graphene; EFFICIENT; COMPOSITE; OXIDATION; RECOMBINATION; PHOTOCATHODES; COCATALYSTS; FABRICATION; STABILITY; FILMS; MO;
D O I
10.1016/j.renene.2019.10.044
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The BiVO4 was firstly prepared by modification's metal organic decomposition method followed by electrodepositing rGO and Cu2O on BiVO4 to construct the rGO decorated BiVO4/Cu2O n-n heterojunction triadic photoanode for photoelectrochemical (PEC) water splitting. The structure and PEC properties of the photoanode were characterized and measured by various spectral analysis and three electrode system. The highest photocurrent density of the triadic photoanode achieves 2.2 mA/cm(2) at 1.8 V (vs. RHE) that is closely 2 folds of single BiVO4 photoanode. The photoanode has the highest IPCE value of 42.0% at 400 nm. The enhanced PEC properties come from the valid separation of the photogenerated electron-hole pair and enhancement of surface oxidation kinetics due to the formation of n-n heterojunction and rGO act as the role of electronic migration mediator accelerates charge carrier transfer, which has been demonstrated by calculated the decrease of charge transfer resistance at electrode/electrolyte interface and prolonging of charge carriers lifetimes. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码:380 / 387
页数:8
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