A 0.03mm2 Highly Balanced Balun IC For Millimeter-Wave Applications in 180-nm CMOS

被引：0

作者：

Sun, Zheng ^{[1
]}

Xu, Xiao ^{[1
]}

Yang, Xin ^{[1
]}

Shibata, Takayuki ^{[2
]}

Yoshimasu, Toshihiko ^{[1
]}

机构：

[1] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka, Japan

[2] DENSO CORP, Adv Semicond R&D Div, Aichi, Japan

来源：

2014 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT): SILICON TECHNOLOGY HEATS UP FOR THZ | 2014年

关键词：

Marchand balun; Millimeter-wave applications; 180-nm CMOS;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm(2). The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.

引用

页数：3

共 9 条

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