Photoelectrochemical oxidation of water using La(Ta,Nb)O2N modified electrodes

被引:23
作者
Arunachalam, Prabhakarn [1 ]
Al-Mayouf, Abdullah [1 ]
Ghanem, Mohamed A. [1 ]
Shaddad, Maged N. [1 ]
Weller, Mark T. [2 ]
机构
[1] King Saud Univ, Coll Sci, Dept Chem, Electrochem Res Grp, Riyadh, Saudi Arabia
[2] Univ Bath, Dept Chem, Claverton Down, Bath, Avon, England
关键词
Oxynitride photocatalyst; Electrophoretic deposition; Water oxidation; Cobalt phosphate; Visible light activity; LATIO2N ELECTRODES; OXYGEN EVOLUTION; TICL4; TREATMENT; PHOTOCATALYST; FABRICATION; PHOSPHATE; CATALYST; PHOTOANODE; DRIVEN; ARRAYS;
D O I
10.1016/j.ijhydene.2015.11.169
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lanthanum tantalum niobium oxynitride [La(Ta,Nb)O2N] powders were prepared with different Nb/Ta ratios by conventional solid state reaction. La(Ta,Nb)O2N photoanodes were fabricated by electrophoretic deposition of La(Ta,Nb)O2N suspension in acetone onto ITO substrate. The La(Ta,Nb)O2N photoanodes were found to exhibit photoelectrochemical activity for water oxidation reaction in alkaline solution. Subsequently, a cobalt-phosphate based oxygen evolution catalyst (CoPi-OEC) was photodeposited onto the surface of the La(Ta,Nb)O2N catalyst to improve the photoelectrochemical performance. In the presence of CoPi catalyst, the photocurrent-voltage characteristics of the La(Ta,Nb)O2N electrodes were enhanced with its effect more pronounced at lower potentials. A stable photocurrent density of 20 mA/cm(2) at 1.2 V vs SCE was achieved under the illumination using alkaline phosphate solution with pH 13. Relative to the La(Ta,Nb)O2N photoanodes, nearly three times higher photocurrent density was observed at 1.2 V vs SCE for a CoPi/La(Ta,Nb)O2N photoelectrode. Perovsldte-based oxide-nitrides modified with suitable cocatalyst of CoPi, have been shown as a new pathway towards substantial photoelectrochemical current gain during the PEC water splitting reaction. (C) 2015 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:11644 / 11652
页数:9
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