Specific features of Bi2Te3 doping with Sn

被引：26

作者：

Zhitinskaya, MK ^{[1
]}

Nemov, SA

Svechnikova, TE

机构：

[1] St Petersburg State Univ, St Petersburg 195251, Russia

[2] Russian Acad Sci, AA Baikov Met Inst, Moscow, Russia

来源：

PHYSICS OF THE SOLID STATE | 1998年 / 40卷 / 08期

关键词：

D O I：

10.1134/1.1130548

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of doping bismuth telluride with tin, on its electrophysical properties, has been studied. It is shown that the main features in the transport coefficients of Bi2Te3:Sn can be explained by the existence of resonant Sn states within the valence band. The existence of resonant Sn states was confirmed by codoping Bi2Te3:Sn with the electroactive impurity I. (C) 1998 American Institute of Physics. [S1063-7834(98)00908-3].

引用

页码：1297 / 1300

页数：4

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