Violet Laser Diode Enables Lighting Communication

被引:34
作者
Chi, Yu-Chieh [1 ]
Huang, Yu-Fang [1 ]
Wu, Tsai-Chen [1 ]
Tsai, Cheng-Ting [1 ]
Chen, Li-Yin [2 ]
Kuo, Hao-Chung [3 ]
Lin, Gong-Ru [1 ]
机构
[1] Natl Taiwan Univ NTU, Grad Inst Photon & Optoelect, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan
[2] Natl Sun Yat Sen Univ NSYSU, Dept Photon, 70 Lienhai Rd, Kaohsiung 80424, Taiwan
[3] Natl Chiao Tung Univ NCTU, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu 30050, Taiwan
关键词
CONVERTED WHITE-LIGHT; LOCKED WRC-FPLD; NM GAN LASER; 16-QAM OFDM; TRANSMISSION; MODULATION; GBIT/S; VLC;
D O I
10.1038/s41598-017-11186-0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Violet laser diode (VLD) based white-light source with high color rendering index (CRI) for lighting communication is implemented by covering with Y3Al5O12:Ce3+ (YAG:Ce) or Lu3Al5O12:Ce3+/CaAlSiN3: Eu2+ (LuAG: Ce/CASN: Eu) phosphorous diffuser plates. After passing the beam of VLD biased at 70 mA (similar to 2I(th)) through the YAG: Ce phosphorous diffuser, a daylight with a correlated color temperature (CCT) of 5068 K and a CRI of 65 is acquired to provide a forward error correction (FEC) certified data rate of 4.4 Gbit/s. By using the VLD biased at 122 mA (similar to 3.5I(th)) to excite the LuAG: Ce/CASN: Eu phosphorous diffuser with 0.85-mm thickness, a warm white-light source with a CCT of 2700 K and a CRI of 87.9 is obtained at a cost of decreasing transmission capacity to 2.4 Gbit/s. Thinning the phosphor thickness to 0.75 mm effectively reduces the required bias current by 32 mA to achieve the same CCT for the delivered white light, which offers an enlarged CRI of 89.1 and an increased data rate of 4.4 Gbit/s. Further enlarging the bias current to 105 mA remains the white-light transmission capacity at 4.4 Gbit/s but reveals an increased CCT of 3023 K and an upgraded CRI of 91.5.
引用
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页数:11
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