Characterization of focused ion beam induced deposition process and parameters calibration

被引：18

作者：

Fu, YQ ^{[1
]}

Bryan, NKA ^{[1
]}

Shing, ON ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mech & Prod Engn, Precis Engn Lab, Singapore 639798, Singapore

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 88卷 / 01期

关键词：

characterization; FIB deposition; physical model; calibration;

D O I：

10.1016/S0924-4247(00)00490-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deposition of metal or insulator by focused ion beam (FIB) technology is very useful for microsensor fabrication, IC chip modification and failure analysis. Characteristics of depositing tungsten is studied, and physical model is put forth in this paper. The deposition quality of the deposited layer was analyzed by varying operating parameters, such as dwell time, beam spot size, beam current and refresh time. By analyzing the experimental results, optimum parameters are derived for deposition process so as to provide experimental basis for actual application in the future. It is verified by the results that the physical model is in accordance with actual operation condition. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：58 / 66

页数：9

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