Gas-phase chemistry and reactive-ion etching kinetics for silicon-based materials in C4F8 + O2 + Ar plasma (vol 18, e2000249, 2021)

被引：0
|
作者：
Lee, Byung J. [1 ]
Efremov, Alexander [2 ]
Kwon, Kwang-Ho [1 ]
机构：
[1] Korea Univ, Dept Control & Instrumentat Engn, Sejong 30019, South Korea
[2] State Univ Chem Technol, Dept Elect Devices & Mat Technol, Ivanovo, Russia
来源：
PLASMA PROCESSES AND POLYMERS | 2021年
关键词：
D O I：
10.1002/ppap.20207024
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：2
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