The Influence of the Capping Layer on the Perpendicular Magnetic Anisotropy in Permalloy Thin Films

被引：11

作者：

Gabor, Mihai S. ^{[1
]}

Tiusan, Coriolan ^{[1
,2
]}

Petrisor, Traian, Jr. ^{[1
]}

Petrisor, Traian ^{[1
]}

机构：

[1] Tech Univ Cluj Napoca, Ctr Superconduct Spintron & Surface Sci, Cluj Napoca 400027, Romania

[2] Lorraine Univ, Inst Jean Lamour, F-54395 Nancy, France

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2014年 / 50卷 / 11期

关键词：

Magnetic films; perpendicular magnetic anisotropy; sputter deposition; X-ray diffraction; MULTILAYERS;

D O I：

10.1109/TMAG.2014.2320296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we show that perpendicular magnetic anisotropy can be achieved in polycrystalline Ni80Fe20 films on MgO underlayers grown on thermally oxidized Si substrates. The perpendicular magnetic anisotropy is already present in the as-deposited films and preserved after thermal annealing. This paper points out the crucial role of the capping layer on the perpendicular magnetic anisotropy stabilization. By changing the nature of the capping from MgO, V, Nb to Ta, the value of the surface anisotropy constant is increased from 0.3 +/- 0.05 erg/cm(2) in the case of the MgO to 0.79 +/- 0.06 erg/cm(2) in the case of the Ta capping, respectively. For Ta capped samples, the perpendicular magnetization is achieved for Ni80Fe20 films with an effective thickness below 1.1 nm.

引用

页数：4

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