共 41 条
Dual layer semiconducting nanocomposite of silicon nanowire and polythiophene for organic-based field effect transistors
被引:7
作者:
Hsieh, Gen-Wen
[1
]
Wu, Jia-Yuan
[2
]
Ogata, Ken
[3
,4
]
Cheng, Kuang-Yao
[2
]
机构:
[1] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, 301 Gaofa Third Rd, Tainan 71150, Taiwan
[2] Natl Chiao Tung Univ, Inst Photon Syst, 301 Gaofa Third Rd, Tainan 71150, Taiwan
[3] Univ Cambridge, Dept Engn, 9 JJ Thomson Ave, Cambridge CB3 0FA, England
[4] Samsung Adv Inst Technol, 130 Samsung Ro, Suwon 443803, Gyeonggi Do, South Korea
关键词:
Field effect transistor;
Nanowire;
Polythiophene;
Nanocomposite;
THIN-FILM TRANSISTORS;
ZINC-OXIDE NANOSTRUCTURES;
WALLED CARBON NANOTUBES;
MOBILITY;
ELECTRONICS;
POLYMERS;
ENHANCEMENT;
BLENDS;
TRANSPORT;
D O I:
10.1016/j.orgel.2016.05.020
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We investigate a dual layer active channel of random distributed intrinsic silicon nanowires and solution processing semiconducting polythiophene polymers for organic-based field effect transistors. Primary results show that low density silicon nanowire networks could enhance the effective charge carrier mobility of polythiophene transistors by a factor of six, suggesting that these nanowires act as rapid one-dimensional charge transport bridges in the active channel. Moreover, increasing the nanowire loading in the dual layer nanocomposite could further lessen the transistor hysteresis. The lifetime test of nanowire-polythiophene devices is found to be more sustainable with respect to that of pristine polythiophene in ambient air. These results indicate that semiconducting nanowires should be considered as a viable additive to active channel for next-generation organic field effect transistors. (C) 2016 Elsevier B.V. All rights reserved.
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页码:158 / 163
页数:6
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