X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

被引：16

作者：

Bremers, H. ^{[1
]}

Schwiegel, A. ^{[1
]}

Hoffmann, L. ^{[1
]}

Joenen, H. ^{[1
]}

Rossow, U. ^{[1
]}

Thalmair, J. ^{[2
]}

Zweck, J. ^{[2
]}

Hangleiter, A. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

[2] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 03期

关键词：

indium content; nitrides; nonpolar; quantum wells; X-ray diffraction; NITRIDE; DIFFRACTION; FIELDS;

D O I：

10.1002/pssb.201046335

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Determination of compositions in multiple quantum well structures is a critical issue. Until now only few experimental description of determination of concentrations in the nonpolar m-or a-direction in III-nitrides by means of X-ray diffraction has been published. Using the example of GaInN/GaN multiple quantum well structures we present different methods to determine the indium concentration. After presenting the relevant elasticity relations we adopt a step model introduced by Segmuller and Blakeslee to nonpolar directions. This model allows a simulation of symmetrical 2 theta-omega scans. We will discuss the possibilities and also the limitations of this model. Additionally, we present a method to determine concentrations by using the peak position of the zero order superlattice peak. Finally, we compare the methods using samples grown on m-plane SiC and bulk m-plane GaN. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：616 / 621

页数：6

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