Dimensionality of photoluminescence spectrum of GaAs/AlGaAs system

被引:7
作者
Fu, Y
Willander, M
Li, ZF
Lu, W
机构
[1] Univ Gothenburg, Dept Phys, Microtechnol Ctr Chalmers, Lab Phys Elect & Photon, S-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, S-41296 Gothenburg, Sweden
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
关键词
D O I
10.1063/1.1357781
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have theoretically studied the radiative recombination process between a conduction-band electron and a valence-band hole to analyze the photoluminescence (PL) spectrum. It is shown that due to the characteristics of the energy density of states, the line shape of the PL peak depends strongly on the dimensionality of the system under investigation, thus indicating the importance of the PL line shape in the identification of the corresponding optical transition process. Increasing the quantum confinement of a system from three-dimensional (3D bulk material) to two-dimensional (quantum well), one-dimensional (quantum wire) and zero-dimensional (quantum dot) results in a transition from a highly nonsymmetric PL peak to a symmetric Lorentzian one centered at the optical transition energy. (C) 2001 American Institute of Physics.
引用
收藏
页码:5112 / 5116
页数:5
相关论文
共 16 条
[1]   ACCURATE THEORY OF EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELLS [J].
ANDREANI, LC ;
PASQUARELLO, A .
PHYSICAL REVIEW B, 1990, 42 (14) :8928-8938
[2]   Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells [J].
Bottazzi, C ;
Parisini, A ;
Tarricone, L ;
Magnanini, R ;
Baraldi, A .
PHYSICAL REVIEW B, 2000, 62 (04) :2731-2736
[3]  
Brittain S, 1998, PHYS WORLD, V11, P31
[4]   THEORY OF LINE-SHAPES OF EXCITON RESONANCES IN SEMICONDUCTOR SUPERLATTICES [J].
CHU, HY ;
CHANG, YC .
PHYSICAL REVIEW B, 1989, 39 (15) :10861-10871
[5]   LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].
FELDMANN, J ;
PETER, G ;
GOBEL, EO ;
DAWSON, P ;
MOORE, K ;
FOXON, C ;
ELLIOTT, RJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2337-2340
[6]   Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire [J].
Fu, Y ;
Willander, M ;
Liu, XQ ;
Lu, W ;
Shen, SC ;
Tan, HH ;
Yuan, S ;
Jagadish, C .
SUPERLATTICES AND MICROSTRUCTURES, 1999, 26 (05) :307-315
[7]   EXCITON BINDING-ENERGY IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS [J].
FU, Y ;
CHAO, KA .
PHYSICAL REVIEW B, 1991, 43 (15) :12626-12629
[8]   BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J].
GREENE, RL ;
BAJAJ, KK .
SOLID STATE COMMUNICATIONS, 1983, 45 (09) :831-835
[9]   Resonant femtosecond emission from quantum well excitons: The role of Rayleigh scattering and luminescence [J].
Haacke, S ;
Taylor, RA ;
Zimmermann, R ;
BarJoseph, I ;
Deveaud, B .
PHYSICAL REVIEW LETTERS, 1997, 78 (11) :2228-2231
[10]   Quantum theory of secondary emission in optically excited semiconductor quantum wells [J].
Kira, M ;
Jahnke, F ;
Koch, SW .
PHYSICAL REVIEW LETTERS, 1999, 82 (17) :3544-3547