Preparation and electrical properties of electrospun tin-doped indium oxide nanowires

被引：55

作者：

Lin, Dandan ^{[1
]}

Wu, Hui ^{[1
]}

Zhang, Rui ^{[1
]}

Pan, Wei ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 46期

关键词：

D O I：

10.1088/0957-4484/18/46/465301

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Well-aligned tin-doped indium (ITO) nanowires have been prepared using the electrospinning process. The Sn doping mechanism and microstructure have been characterized by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Devices for I-V measurement and field-effect transistors (FETs) were assembled using ITO nanowires with top contact configurations. The effect of Sn doping on the electrical conductivity was significant in that it enhanced the conductance by over 10(7) times, up to similar to 1 S cm(-1) for ITO nanowires with an Sn content of 17.5 at.%. The nanowire FETs were operated in the depletion mode with an electron mobility of up to 0.45 cm(2) V-1 s(-1) and an on/off ratio of 10(3).

引用

页数：6

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