Analysis and characterisation of erbium implanted, titanium diffused lithium niobate optical waveguides.

被引：0

作者：

Mizzi, P

Austin, MW

Mitchell, A

McCallum, JC

机构：

来源：

1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS | 1996年

关键词：

D O I：

10.1109/COMMAD.1996.610159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this study was to investigate erbium doping of LiNbO3 using high energy ion implantation. Several Er implanted devices were fabricated and measured at 1300 and 1530 nm. The Er implantation profile was also measured using SIMS and photoluminescence measurements indicated an upper fluorescence lifetime of 2.75 ms.

引用

页码：434 / 437

页数：4