Analog CMOS integrated circuits for high-temperature operation with leakage current compensation

被引:10
|
作者
Mizuno, K [1 ]
Ohta, N [1 ]
Kitagawa, F [1 ]
Nagase, H [1 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 48011, Japan
关键词
D O I
10.1109/HITEC.1998.676758
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
To facilitate high-temperature operation of CMOS analog integrated circuits, we proposed new compensation circuits which compensated for PN-junction leakage current more precisely than conventional compensation circuits. As the result of applying these circuits to a voltage reference circuit, the operating temperature region was extended 20-40 degrees C.
引用
收藏
页码:41 / 44
页数:4
相关论文
共 50 条
  • [1] HIGH-TEMPERATURE LEAKAGE CURRENT SUPPRESSION IN CMOS INTEGRATED-CIRCUITS
    NORDQUIST, SE
    HASLETT, JW
    TROFIMENKOFF, FN
    ELECTRONICS LETTERS, 1989, 25 (17) : 1133 - 1135
  • [2] DESIGN CONSIDERATIONS IN HIGH-TEMPERATURE ANALOG CMOS INTEGRATED-CIRCUITS
    SHOUCAIR, FS
    IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1986, 9 (03): : 242 - 251
  • [3] Electromagnetic Compatibility in Leakage Current of CMOS Integrated Circuits
    Abedi, Zahra
    Hemmady, Sameer
    Antonsen, Thomas
    Schamiloglu, Edl
    Zarkesh-Ha, Payman
    2019 INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (EMC EUROPE 2019), 2019, : 765 - 768
  • [4] Leakage Current Compensation for a 450 nW, High-Temperature, Bandgap Temperature Sensor
    Nilsson, Joakim
    Borg, Johan
    Johansson, Jonny
    2015 22ND INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS & SYSTEMS (MIXDES), 2015, : 343 - 347
  • [5] CMOS ANALOG INTEGRATED-CIRCUITS BASED ON WEAK INVERSION OPERATION
    VITTOZ, E
    FELLRATH, J
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (03) : 224 - 231
  • [6] HIGH TEMPERATURE ANALOG INTEGRATED CIRCUITS.
    Beasom, J.D.
    Conference Record - Electro, 1980,
  • [7] Bendable CMOS Digital and Analog Circuits Monolithically Integrated with a Temperature Sensor
    Honda, Wataru
    Arie, Takayuki
    Akita, Seiji
    Takei, Kuniharu
    ADVANCED MATERIALS TECHNOLOGIES, 2016, 1 (05):
  • [8] HIGH-TEMPERATURE LATCHUP CHARACTERISTICS IN VLSI CMOS CIRCUITS
    SHOUCAIR, FS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2424 - 2426
  • [9] The design of a high-temperature MEMS pressure sensor with integrated temperature compensation and signal-conditioning circuits
    Yao, Zong
    Li, Wang-Wang
    Zhang, Di-Ya
    Qi, Lei
    Zhang, Bin
    Lei, Cheng
    Li, Xin
    Liang, Ting
    Xiong, Ji-Jun
    PROCEEDINGS OF THE 2ND ANNUAL INTERNATIONAL CONFERENCE ON ELECTRONICS, ELECTRICAL ENGINEERING AND INFORMATION SCIENCE (EEEIS 2016), 2016, 117 : 395 - 406
  • [10] High Temperature Silicon Carbide CMOS Integrated Circuits
    Clark, David T.
    Ramsay, Ewan P.
    Murphy, A. E.
    Smith, D. A.
    Thompson, R. F.
    Young, R. A. R.
    Cormack, J. D.
    Zhu, C.
    Finney, S.
    Fletcher, J.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 726 - +