Deposition of TiN thin films using grid-assisting magnetron sputtering

被引:5
作者
Jung, MJ [1 ]
Kim, YM [1 ]
Chung, YM [1 ]
Ahn, SH [1 ]
Kim, JG [1 ]
Han, JG [1 ]
机构
[1] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, Suwon 440746, South Korea
关键词
grid-assisted magnetron sputtering; OES; TiN; corrosion;
D O I
10.1016/j.tsf.2004.07.018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper presents a modification to conventional magnetron sputtering systems. The introduction of grid in front of the target increases metal ion ratio. By using optical emission spectroscopy (OES) and observing both Ti neutrals and Ti ions, the relative fraction of ion could be qualitatively extended to grid-attached magnetron sputtering as compared with the conventional magnetron system. And, experimental results clearly demonstrated that a smooth and dense TiN film with a specular reflecting surface and could be produced by grid-attached magnetron with much increased Ti ion fractions as compared to conventional magnetron. From the potentiodynamic polarization test, it was shown that the corrosion current density of TiN deposited by two grid-attached magnetron sputtering was lower than that of TiN deposited by conventional magnetron sputtering. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:323 / 326
页数:4
相关论文
共 9 条
[1]   The mechanical and structural properties of Ti films prepared by filtered arc deposition [J].
Bendavid, A ;
Martin, PJ ;
Smith, GB ;
Wielunski, L ;
Kinder, TJ .
VACUUM, 1996, 47 (10) :1179-1188
[2]  
BROWN IG, 1987, PHYS TECHNOLOGY ION
[3]  
CUNDA L, 1999, SURF COAT TECH, V116, P1152
[4]   Influence of high power densities on the composition of pulsed magnetron plasmas [J].
Ehiasarian, AP ;
New, R ;
Münz, WD ;
Hultman, L ;
Helmersson, U ;
Kouznetsov, V .
VACUUM, 2002, 65 (02) :147-154
[5]   Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films [J].
Gautier, C ;
Moulard, G ;
Chatelon, JP ;
Motyl, G .
THIN SOLID FILMS, 2001, 384 (01) :102-108
[6]   MECHANISMS FOR HIGHLY IONIZED MAGNETRON SPUTTERING [J].
HOPWOOD, J ;
QIAN, F .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :758-765
[7]   LOW-ENERGY ION IRRADIATION DURING FILM GROWTH FOR REDUCING DEFECT DENSITIES IN EPITAXIAL TIN(100) FILMS DEPOSITED BY REACTIVE-MAGNETRON SPUTTERING [J].
HULTMAN, L ;
HELMERSSON, U ;
BARNETT, SA ;
SUNDGREN, JE ;
GREENE, JE .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :552-555
[8]   Ion energy distribution in ionized dc sputtering measured by an energy-resolved mass spectrometer [J].
Kusano, E ;
Kobayashi, T ;
Kashiwagi, N ;
Saitoh, T ;
Saiki, S ;
Nanto, H ;
Kinbara, A .
VACUUM, 1999, 53 (1-2) :21-24
[9]   Low temperature deposition of TiO2 films with high refractive indices by oxygen-radical beam-assisted evaporation combined with ion beam [J].
Yamada, Y ;
Uyama, H ;
Murata, T ;
Nozoye, H .
VACUUM, 2002, 66 (3-4) :347-352