A new approach of creating Au-Sn solder bumps from electroplating

被引：10
|
作者：
Wei, J [1 ]
机构：
[1] Agilent Technol, Singapore Commun Operat, Singapore 757696, Singapore
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2006年 / 41卷 / 02期
关键词：
electroplating; Au-Sn; bump; flat-chip;
D O I：
10.1002/crat.200510547
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A homogeneous melting eutectic Au/Sn solder bump for laser chip application has been developed. The under-bump metallization consists of a Ni wetting layer, a plating seed layer of Pt/Au/Ti multi-layer scheme. The solder is electroplated as a sequence of Ni, Au. and Sn layers. The bump can be exposed to multi-step reflow cycles. The reflow of the solder as plated starts with a phase forming process in the solid state which results in an eutectic-like phase and the near eutectic dand z phases. The dand z phases dissolve during the liquid state stage of the reflow at temperatures between 300 and 350 degrees C. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：150 / 153
页数：4
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