Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot

被引：18

作者：

Yamazaki, Shiro ^{[1
]}

Maeda, Keisuke ^{[2
]}

Sugimoto, Yoshiaki ^{[2
]}

Abe, Masayuki ^{[3
]}

Zobac, Vladimir ^{[4
]}

Pou, Pablo ^{[5
,6
]}

Rodrigo, Lucia ^{[5
,6
]}

Mutombo, Pingo ^{[4
]}

Perez, Ruben ^{[5
,6
]}

Jelinek, Pavel ^{[2
,4
]}

Morita, Seizo ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[2] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5600043, Japan

[4] Acad Sci Czech Republ, Inst Phys, CR-16200 Prague, Czech Republic

[5] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

[6] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain

来源：

NANO LETTERS | 2015年 / 15卷 / 07期

关键词：

Atomic manipulation; atomic switch; Si quantum dot; scanning tunneling microscopy; noncontact atomic force microscopy; density functional theory; SURFACE; MICROSCOPY; ENERGY; DYNAMICS; DIMERS; MOTION;

D O I：

10.1021/acs.nanolett.5b00448

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si-4-QD) using atom manipulation. We demonstrate two competing atom Switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

引用

页码：4356 / 4363

页数：8

共 31 条

[1] FREQUENCY-MODULATION DETECTION USING HIGH-Q CANTILEVERS FOR ENHANCED FORCE MICROSCOPE SENSITIVITY [J].