Improved Electrical Properties and Strong Red Emission of Pr3+-Doped x K0.5Bi0.5TiO3-(1-x)Na0.5Bi0.5TiO3 Lead-Free Ferroelectric Thin Films

被引:36
作者
Zhou, Hong [1 ]
Wu, Guangheng [1 ]
Qin, Ni [1 ]
Bao, Dinghua [1 ]
机构
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
基金
高等学校博士学科点专项科研基金;
关键词
SOL-GEL METHOD; TRANSITIONS;
D O I
10.1111/j.1551-2916.2011.05028.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Structural, photoluminescence, dielectric, and ferroelectric properties of lead-free perovskite Pr3+-doped xK(0.5)Bi(0.5)TiO(3)-(1 - x)Na0.5Bi0.5TiO3 (x = 0-1.0) thin films were studied. The thin films were prepared by a chemical solution deposition method combined with a rapid thermal annealing process at 700 degrees C. We observed that the thin film with x = 0.15, corresponding to the morphotropic phase boundary in the solid solution ceramics or single crystal bulk counterparts, showed a very large dielectric constant and a high remanent polarization, as well as a strong red emission at 611 nm assigned to D-1(2) -> H-3(4) transitions of the Pr3+ ions. In addition, this study also indicates that the morphotropic phase boundary in xK(0.5)Bi(0.5)TiO(3)-(1 - x)Na0.5Bi0.5TiO3 thin films might be probed by photoluminescence probe of Pr3+ ions because the photoluminescence of Pr3+ ions is very sensitive to the phase structure changes.
引用
收藏
页码:483 / 486
页数:4
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