High-Efficiency Tandem White Perovskite Light-Emitting Diodes by Using an Organic/Inorganic Intermediate Connector

被引:6
作者
Yan, Yu [1 ,2 ,3 ]
Zhang, Qi [2 ]
Wang, Zhijian [3 ]
Du, Qifeng [3 ]
Tang, Ruitao [3 ]
Wang, Xiaoyu [2 ]
机构
[1] Zhejiang Univ, Dept Polymer Sci & Engn, Hangzhou 310027, Peoples R China
[2] Qiantang Sci & Technol Innovat Ctr, Hangzhou 310018, Peoples R China
[3] Inst Flexible Elect Technol THU, Jiaxing Key Lab Flexible Elect Based Intelligent, Jiaxing 314006, Peoples R China
基金
中国国家自然科学基金;
关键词
tandem; white perovskite light-emitting diodes; organic; inorganic intermediate connector; NANOCRYSTALS;
D O I
10.3390/cryst12091286
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The performance of monochromatic perovskite light-emitting diodes (PeLEDs) has undergone rapid development in recent years, while white PeLEDs are still in their infancy. The tandem devices prepared by connecting light-emitting units of different colors with intermediate connectors comprise one of the promising approaches for realizing white light emission. The intermediate connector plays a crucial role in determining the effectiveness of the light-emitting units. In this work, all-perovskite-based white LEDs are assembled by employing sky-blue (490 nm) and red (690 nm) perovskite emitters as active layers. With mixed p-type and n-type organic charge transport materials as the intermediate connector, the highest external quantum efficiency (EQE) of the device was 1.4%, the electroluminescence (EL) peak position of the blue light part was shifted to 512 nm, and the red light part was shifted to 673 nm. In contrast, with organic and inorganic charge transport materials as the intermediate connector, the devices exhibited better charge generation/injection capabilities and a record EQE of 8.5%. The EL peak position of the device prepared from the stored film was not shifted, implying that the organic/inorganic layer effectively suppresses halide migration. Our work paves the way for highly efficient tandem white PeLEDs.
引用
收藏
页数:9
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