Vertically Aligned 2D/3D Pb-Sn Perovskites with Enhanced Charge Extraction and Suppressed Phase Segregation for Efficient Printable Solar Cells

被引:123
作者
Li, Chaohui [1 ,2 ]
Pan, Yamin [1 ]
Hu, Jinlong [2 ]
Qiu, Shudi [2 ]
Zhang, Cuiling [2 ]
Yang, Yuzhao [2 ]
Chen, Shi [3 ]
Liu, Xianhu [1 ]
Brabec, Christoph J. [4 ]
Nazeeruddin, Mohammad Khaja [5 ]
Mai, Yaohua [2 ]
Guo, Fei [2 ]
机构
[1] Zhengzhou Univ, Coll Mat Sci & Engn, Natl Engn Res Ctr Adv Polymer Proc Technol, Zhengzhou 450002, Peoples R China
[2] Jinan Univ, Inst New Energy Technol, Coll Informat Sci & Technol, Guangzhou 510632, Peoples R China
[3] Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
[4] Friedrich Alexander Univ Erlangen Nurnberg, Inst Mat Elect & Energy Technol & Meet, D-91058 Erlangen, Germany
[5] Ecole Polytech Fed Lausanne Valais Wallis, Grp Mol Engn Funct Mat, Inst Chem Sci & Engn, CH-1951 Sion, Switzerland
基金
中国国家自然科学基金;
关键词
SEPARATION;
D O I
10.1021/acsenergylett.0c00634
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The concept of mixed 2D/3D heterostructures has emerged as an effective method for improving the stability of lead halide perovskite solar cells, which has been, however, rarely reported in lead-tin (Pb-Sn) mixed perovskite devices. Here, we report a scalable process for depositing mixed 2D/3D Pb-Sn perovskite solar cells that deliver remarkably enhanced efficiency and stability compared to their 3D counterparts. The incorporation of a small amount (3.75%) of an organic cation 2-(4-fluorophenyl)ethylammonium iodide induces the growth of highly oriented Pb-Sn perovskite crystals perpendicularly aligned with the substrate. Moreover, for the first time, phase segregation is observed in pristine 3D Pb-Sn perovskites, which is suppressed due to the presence of the 2D perovskites. Accordingly, a high current density of 28.42 mA cm(-2) is obtained due to the markedly enhanced spectral response and charge extraction. Eventually, mixed 2D/3D Pb-Sn perovskite devices with a band gap of 1.33 eV yield efficiencies as high as 17.51% and in parallel exhibit good stability.
引用
收藏
页码:1386 / 1395
页数:10
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