Further development of high power pump laser diodes

被引：19

作者：

Schmidt, B ^{[1
]}

Lichtenstein, N ^{[1
]}

Sverdlov, B ^{[1
]}

Matuschek, N ^{[1
]}

Mohrdiek, S ^{[1
]}

Pliska, T ^{[1
]}

Müller, J ^{[1
]}

Pawlik, S ^{[1
]}

Arlt, S ^{[1
]}

Pfeiffer, HU ^{[1
]}

Fily, A ^{[1
]}

Harder, C ^{[1
]}

机构：

[1] Bookham Switzerland AG, CH-8045 Zurich, Switzerland

来源：

SEMICONDUCTOR OPTOELECTRONIC DEVICES FOR LIGHTWAVE COMMUNICATION | 2003年 / 5248卷

关键词：

semiconductor laser diodes; laser simulation; optical amplifier; high power laser diodes;

D O I：

10.1117/12.513292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs/InGaAs based high power pump laser diodes with wavelength of around 980 nm are key products within erbium doped fiber amplifiers (EDFA) for today's long haul and metro-communication networks, whereas InGaAsP/InP based laser diodes with 14xx nm emission wavelength are relevant for advanced, but not yet widely-used Raman amplifiers. Due to the changing industrial environment cost reduction becomes a crucial factor in the development of new, pump modules. Therefore, pump laser chips were aggressively optimized in terms of power conversion and thermal stability, which allows operation without active cooling at temperatures exceeding 70 C. In addition our submarine-reliable single mode technology was extended to high power multi-mode laser diodes. These light sources can be used in the field of optical amplifiers as well as for medical, printing and industrial applications. Improvements of pump laser diodes in terms of power conversion efficiency, fiber Bragg grating (FBG) locking performance of single mode devices, noise reduction and reliability will be presented.

引用

页码：42 / 54

页数：13

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