Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons

被引：45

作者：

Hazdra, P

Vobecky, J

Dorschner, H

Brand, K

机构：

[1] Polymer Res Inst, D-01069 Dresden, Germany

[2] Ruhr Univ Bochum, Dynamitron Tandem Lab, D-44780 Bochum, Germany

来源：

MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 03期

关键词：

lifetime control; silicon; irradiation; protons; alphas; electrons; power diodes;

D O I：

10.1016/S0026-2692(03)00194-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Local lifetime control by proton and alpha-particle irradiation with energies from 1.8 to 12.1 MeV and doses up to 5 x 10(12) cm(-2) was faced with two types of electron irradiation giving the different profiles of carrier lifetime: the high-energy (4 MeV) resulting in a homogeneous lifetime distribution and the low-energy (500 and 460 keV) providing so-called sloping lifetime control. Deep and shallow levels introduced by irradiation were characterised by DLTS, HVCTS and C-V profiling and their effect on static and dynamic parameters of irradiated diodes was measured and simulated. The advantages and drawbacks of different lifetime control techniques are compared and their application aspects are discussed, as well. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：249 / 257

页数：9

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