Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

被引：13

作者：

Miranda, E. ^{[1
]}

Palumbo, F. ^{[2
]}

机构：

[1] Univ Autonoma Barcelona, Dept Engn Elect, Bellaterra 08193, Spain

[2] Comis Nacl Energia Atom CONICET CNEA, Consejo Nacl Invest Cient & Tecn, RA-1650 Buenos Aires, DF, Argentina

来源：

SOLID-STATE ELECTRONICS | 2011年 / 61卷 / 01期

关键词：

MOS; Fowler-Nordheim; Tunneling; DIODE EQUATION;

D O I：

10.1016/j.sse.2011.03.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation we(w) = x. The reported expressions are supported by experimental I-V curves measured in thin (approximate to 5 nm) SiO(2) films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Pade-type approximation is also provided. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：93 / 95

页数：3

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