New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

被引：0

作者：

Han, Kijeong ^{[1
]}

Kanale, Ajit ^{[1
]}

Baliga, B. J. ^{[1
]}

Ballard, Bahji ^{[1
]}

Morgan, Adam ^{[1
]}

Hopkins, Douglas C. ^{[1
]}

机构：

[1] North Carolina State Univ, PowerAmer Inst, Raleigh, NC 27695 USA

来源：

2018 IEEE 6TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2018年

关键词：

Silicon Carbide; 4H-SiC; MOSFET; JBSFET; Short Circuit; Ruggedness; Robustness; Reliability; Failure Mechanism; RUGGEDNESS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and analyzed. Due to the lower saturated drain current, the JBSFETs were found to have superior SC-SOA compared with MOSFETs despite the integrated Schottky contact. A new short circuit failure mechanism related to melting of the top Al metallization is proposed based up on nonisothermal TCAD numerical simulations supported with SEM measurements of failed die using Energy Dispersive X-ray Spectroscopy (EDS) analysis.

引用

页码：108 / 113

页数：6

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