Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

被引：22

作者：

Wang, JS ^{[1
]}

Hsiao, RS

Chen, JF

Yang, CS

Lin, G

Liang, CY

Lai, CM

Liu, HY

Chi, TW

Chi, JY

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[2] Natl Tsing Hua Univ, Dept Electrophys, Hsinchu 300, Taiwan

[3] Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 08期

关键词：

electronic vertically coupled quantum dots (EVCQDs); InAs quantum dots (QDs); lasers;

D O I：

10.1109/LPT.2005.851949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous large-broad laser gain spectra near 1.3 mu m are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L = 1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm(2) per QD layer were achieved.

引用

页码：1590 / 1592

页数：3

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