Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

被引：22
|
作者：
Wang, JS [1 ]
Hsiao, RS
Chen, JF
Yang, CS
Lin, G
Liang, CY
Lai, CM
Liu, HY
Chi, TW
Chi, JY
机构：
[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[2] Natl Tsing Hua Univ, Dept Electrophys, Hsinchu 300, Taiwan
[3] Ind Technol Res Inst, Hsinchu 310, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 08期
关键词：
electronic vertically coupled quantum dots (EVCQDs); InAs quantum dots (QDs); lasers;
D O I：
10.1109/LPT.2005.851949
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Continuous large-broad laser gain spectra near 1.3 mu m are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L = 1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm(2) per QD layer were achieved.
引用
收藏
页码：1590 / 1592
页数：3
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