Optical and structural properties in type-II InAlAs/AlGaAs quantum dots observed by photoluminescence, X-ray diffraction and transmission electron microscopy

被引：1

作者：

Ben Daly, A. ^{[1
]}

Craciun, D. ^{[2
]}

Ursu, E. Laura ^{[3
]}

Lemaitre, A. ^{[4
]}

Maaref, M. A. ^{[1
]}

Iacomi, F. ^{[5
]}

Vasile, B. S. ^{[6
]}

Craciun, V. ^{[2
]}

机构：

[1] Univ Carthage, Lab Mat Mol & Applicat, Inst Preparatoire Etud Sci & Tech, BP 51, Tunis 2070, Tunisia

[2] Natl Inst Laser Plasma & Radiat Phys, Magurele, Romania

[3] Inst Macromol Chem, Ctr Adv Res Bionanoconjugates & Biopolymers Petru, Iasi, Romania

[4] CNRS, Lab Photon & Nanostruct, UPR 20, Route Nozay, F-91460 Marcoussis, France

[5] Alexandru Ioan Cuza Univ, Fac Phys, Iasi, Romania

[6] Univ Politehn Bucuresti, Natl Res Ctr Food Safety, Fac Appl Chem & Mat Sci, Bucharest, Romania

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 110卷

关键词：

Quantum dots; High-resolution X-ray diffraction; Raman spectroscopy; Reciprocal space map; RADIATIVE RECOMBINATION; GROWTH;

D O I：

10.1016/j.spmi.2017.08.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present the effects of AIGaAs alloy composition on InAlAs quantum dots (QDs) optical and structural properties. Photoluminescence (PL) analysis of samples having a variety of aluminium composition values covering type-II transitions clearly in QDs showed the presence of two transitions X-S-h and X-P-h. High-resolution X-ray diffraction (HRXRD) investigations showed that the layers grew epitaxially on the GaAs substrate, with no relaxation regardless the Al content of AIGaAs layer. From the reciprocal space map (RSM) investigation around (004) and (115) diffraction peaks, it was shown that the InAlAs layer is fully strained, the in-plane lattice parameters (a and b, a = b) being identical to those of GaAs substrate, while the c lattice parameter was dependent on the In and Al concentrations, being larger than that of the substrate. High-resolution transmission electronic microscopy (HRTEM) investigations confirmed that films grew epitaxially on the GaAs substrate with no visible dislocations or other major defects within the InAlAs/GaAlAs QDs structure. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：1 / 9

页数：9

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