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Investigations on the structural, optical and electrical properties of Nb-doped SnO2 thin films
被引:54
作者:
Gokulakrishnan, V.
[1
]
Parthiban, S.
[1
]
Jeganathan, K.
[2
]
Ramamurthi, K.
[1
]
机构:
[1] Bharathidasan Univ, Sch Phys, Crystal Growth & Thin Films Lab, Tiruchirappalli 620024, Tamil Nadu, India
[2] Bharathidasan Univ, Sch Phys, Ctr Nanosci & Nanotechnol, Tiruchirappalli 620024, Tamil Nadu, India
关键词:
CHEMICAL-VAPOR-DEPOSITION;
TRANSPARENT CONDUCTING OXIDE;
PHYSICAL-PROPERTIES;
SPRAYED SNO2;
PHOTOLUMINESCENCE;
GROWTH;
METAL;
CELLS;
LAYER;
D O I:
10.1007/s10853-011-5504-x
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Niobium-doped tin oxide thin films were deposited on glass substrates by the chemical spray pyrolysis method at a substrate temperature of 400 A degrees C. Effects of Nb doping on the structural, electrical and optical properties have been investigated as a function of niobium concentration (0-2 at.%) in the spray solution. X-ray diffraction patterns showed that the films are polycrystalline in nature and the preferred growth direction of the undoped film shifts to (200) for Nb-doped films. Atomic force microscopy study shows that the surface morphology of these films vary when doping concentration varies. The negative sign of Hall coefficient confirmed the n-type conductivity. Resistivity of similar to 4.3 x 10(-3) Omega cm, carrier concentration of similar to 5 x 10(19) cm(-3), mobility of similar to 25 cm(2) V-1 s(-1) and an average optical transmittance of similar to 70% in the visible region (500-800 nm) were obtained for the film doped with 0.5 at.% niobium.
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页码:5553 / 5558
页数:6
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