Application of X-Ray Scattering Techniques for Semiconductor-based Quantum Structures

被引：0

作者：

Sharma, Manjula ^{[1
]}

Sanyal, Milan K. ^{[1
]}

Saha, Biswajit ^{[1
]}

Chakraborty, Purushottam ^{[1
]}

机构：

[1] Saha Inst Nucl Phys, Surface Phys Div, Kolkata 700064, India

来源：

2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) | 2009年

关键词：

Compressive Strain; MBE; Si-Ge Superlattice; X-Ray scattering; SURFACE; GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si-Ge superlattice structures have been prepared by Molecular Beam Epitaxy (MBE) and investigated using X-Ray scattering techniques. The satellite peaks occurring in X-Ray reflectivity and X-Ray diffraction give information about the periodicity of the superlattice. Calculations of the dynamical diffraction reveal that the Ge layer is under compressive strain.

引用

页码：522 / 524

页数：3

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