High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

被引：0

作者：

Ma, XY ^{[1
]}

Cao, Q ^{[1
]}

Wang, ST ^{[1
]}

Guo, L ^{[1
]}

Wang, ZM ^{[1
]}

Wang, LM ^{[1
]}

He, GP ^{[1
]}

Yang, YL ^{[1
]}

Zhang, HQ ^{[1
]}

Zhou, XN ^{[1
]}

Chen, LH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

SEMICONDUCTOR LASERS III | 1998年 / 3547卷

关键词：

InGaAsP; strained layer quantum well; laser diode; MOCVD;

D O I：

10.1117/12.319615

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

引用

页码：8 / 11

页数：4