High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

被引：0
|
作者：
Ma, XY [1 ]
Cao, Q [1 ]
Wang, ST [1 ]
Guo, L [1 ]
Wang, ZM [1 ]
Wang, LM [1 ]
He, GP [1 ]
Yang, YL [1 ]
Zhang, HQ [1 ]
Zhou, XN [1 ]
Chen, LH [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
SEMICONDUCTOR LASERS III | 1998年 / 3547卷
关键词：
InGaAsP; strained layer quantum well; laser diode; MOCVD;
D O I：
10.1117/12.319615
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.
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收藏
页码：8 / 11
页数：4
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