Fabrication of single-crystal lithium niobate films by crystal ion slicing

被引：316

作者：

Levy, M ^{[1
]}

Osgood, RM

Liu, R

Cross, LE

Cargill, GS

Kumar, A

Bakhru, H

机构：

[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA

[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

[3] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA

[4] SUNY Albany, Dept Phys, Albany, NY 12222 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期

关键词：

D O I：

10.1063/1.121801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the implementation of crystal ion slicing in lithium niobate (LiNbO3). Deep-ion implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of LiNbO3, inducing a large etch selectivity between the sacrificial layer and the rest of the sample. 9-mu m-thick films of excellent quality are separated from the bulk and bonded to silicon and gallium arsenide substrates. These single-crystal films have the same room-temperature dielectric and pyroelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric response is found in the films. (C) 1998 American Institute of Physics. [S0003-6951(98)04142-4].

引用

页码：2293 / 2295

页数：3

共 13 条

[1]

Dresselhaus M.S., 1992, ION IMPLANTATION DIA, V1

[2] EPITAXIAL MGO ON GAAS(111) AS A BUFFER LAYER FOR Z-CUT EPITAXIAL LITHIUM-NIOBATE [J].

FORK, DK ;

ANDERSON, GB .

APPLIED PHYSICS LETTERS, 1993, 63 (08) :1029-1031

[3] LINEAR ELECTRO-OPTIC EFFECT IN SPUTTERED POLYCRYSTALLINE LINBO3 FILMS [J].

GRIFFEL, G ;

RUSCHIN, S ;

CROITORU, N .

APPLIED PHYSICS LETTERS, 1989, 54 (15) :1385-1387

[4] THE SEPARATION OF THIN SINGLE-CRYSTAL FILMS FROM BULK DIAMOND BY MEV IMPLANTATION [J].

HUNN, JD ;

WITHROW, SP ;

WHITE, CW ;

CLAUSING, RE ;

HEATHERLY, L ;

CHRISTENSEN, CP ;

PARIKH, NR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4) :602-605

[5] LOW-TEMPERATURE GROWTH OF EPITAXIAL LINBO3 FILMS ON SAPPHIRE(0001) SUBSTRATES USING PULSED-LASER DEPOSITION [J].

LEE, SH ;

SONG, TK ;

NOH, TW ;

LEE, JH .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :43-45

[6] Epitaxial liftoff of thin oxide layers: Yttrium iron garnets onto GaAs [J].

Levy, M ;

Osgood, RM ;

Kumar, A ;

Bakhru, H .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2617-2619

[7]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P14

[8] DEPOSITION AND ANALYSIS OF LITHIUM-NIOBATE AND OTHER LITHIUM NIOBIUM OXIDES BY RF MAGNETRON SPUTTERING [J].

ROST, TA ;

HE, L ;

RABSON, TA ;

BAUMANN, RC ;

CALLAHAN, DL .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) :4336-4343

[9] PREPARATION AND CHARACTERIZATION OF LINBO3 THIN-FILMS PRODUCED BY CHEMICAL-VAPOR-DEPOSITION [J].

SAKASHITA, Y ;

SEGAWA, H .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) :5995-5999

[10] Mosaic structure in epitaxial thin films having large lattice mismatch [J].

Srikant, V ;

Speck, JS ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4286-4295

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