Efficient modeling of single event transients directly in compact device models

被引：9

作者：

Francis, A. M. ^{[1
]}

Turowski, M. ^{[2
]}

Holmes, J. A. ^{[3
]}

Mantooth, H. A. ^{[1
,4
]}

机构：

[1] Univ Arkansas, Fayetteville, AR 72701 USA

[2] CFD Res Corp, Huntsville, AL USA

[3] Lynguent Inc, Portland, OR USA

[4] Univ Arkansas, Fayetteville, AR 72701 USA

来源：

BMAS 2007: PROCEEDINGS OF THE 2007 IEEE INTERNATIONAL BEHAVIORAL MODELING AND SIMULATION WORKSHOP | 2007年

关键词：

D O I：

10.1109/BMAS.2007.4437528

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

With decreasing feature size, analysis of circuits for radiation strike vulnerability is becoming very important in a many applications. Classical modeling methods may be not sufficient to reproduce single event transients observed in deep-submicron, fast ICs. A novel approach for development and efficient inclusion of such effects directly in compact device models is described.

引用

页码：73 / +

页数：2

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