Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure

被引：3
|
作者：
Yao, W
Qiu, ZJ
Gui, YS
Zheng, ZW
Lü, J
Tang, N
Shen, B
Chu, JH [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Theoret Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
ACTA PHYSICA SINICA | 2005年 / 54卷 / 05期
关键词：
AlGaN/GaN heterostructure; SdH oscillator; magneto-intersubband scattering; beating patterns;
D O I：
10.7498/aps.54.2247
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Magneto-transport measurements have been carried out on a Si modulation-doped Al0.22Ga0.78 N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.
引用
收藏
页码：2247 / 2251
页数：5
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