Solid-state synthesis semiconducting BaTiO3 nanoparticles at low temperature

被引:7
|
作者
Qi, Jianquan [1 ]
Li, Yan [1 ]
Zhang, Xinyi [2 ,3 ]
Wang, Jiang [4 ]
Zhang, Qinqin [1 ]
Xue, Yingfang [1 ]
Cheng, Jing [1 ]
Li, Mengying [1 ]
Han, Xiumei [1 ]
Ma, Zhenwei [1 ]
Fang, Daran [1 ]
机构
[1] Northeastern Univ Qinhuangdao, Sch Nat Resources & Mat Sci, Qinhuangdao 066004, Hebei, Peoples R China
[2] Guangxi Univ, Collaborat Innovat Ctr Sustainable Energy Mat, Nanning 530004, Peoples R China
[3] Guangxi Univ, State Key Lab Proc Nonferrous Met & Featured Mat, Nanning 530004, Peoples R China
[4] Zhuhai 4U Elect Ceram Co LTD, Innovat First Rd 20, Hitech Zone 519085, Zhuhai, Peoples R China
关键词
BaTiO3; Ba/ti ratio; Semiconducting; Nanoparticles; SSLT; ELECTROMAGNETIC PROPERTIES; BARIUM-TITANATE; NANOSTRUCTURES; HEXAFERRITES; CERAMICS; KINETICS; REMOVAL; OXIDES;
D O I
10.1016/j.matchemphys.2019.122496
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a simple and facile approach for the synthesis of semiconducting BaTiO3 nanoparticles at low temperature using a direct solid state reaction between metal Ti and barium nitrate. The irregular large grain-sized Ba(NO3)(2) and Ti powders can be converted into homogenous BaTiO3 nanoparticles. The morphologies and structures of the BaTiO3 nanoparticles can be facilely tuned. The semiconducting BaTiO3 nanoparticles can be obtained at the condition of Ba/Ti ratio between 1:1 and1:3 just calcinated at 550 degrees C. The residual Ba(NO3)(2) can be clear observed when Ba/Ti > 1:1, and titanium nitride appear when Ba/Ti similar to 1:16.The reaction of synthesis of semiconducting BaTiO3 nanoparticles starts at 550 degrees C. Under the suitable conditions, semiconducting BaTiO3 nanoparticles can be prepared with the grain size similar to 30 nm homogenously. During synthesis reaction, the transfer of N cation into Ti lattice is proposed for the mechanism of direct reaction between Ba(NO3)(2) and Ti for synthesis of BaTiO3 nanoparticles, which results in cation N decreases its valence and turns to an anion.
引用
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页数:7
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