Transport properties of Y0.95Ca0.05MnO3/Si thin film junction

被引：29

作者：

Dhruv, Davit ^{[1
,2
]}

Joshi, Zalak ^{[2
]}

Gadani, Keval ^{[2
]}

Solanki, Sapana ^{[1
,2
]}

Markna, J. H. ^{[1
]}

Joshi, A. D. ^{[3
]}

Asokan, K. ^{[4
]}

Solanki, P. S. ^{[2
]}

Shah, N. A. ^{[2
]}

机构：

[1] VVP Engn Coll, Dept Nanotechnol, Rajkot 360005, Gujarat, India

[2] Saurashtra Univ, Dept Phys, Rajkot 360005, Gujarat, India

[3] Saurashtra Univ, Dept Nanosci & Adv Mat, Rajkot 360005, Gujarat, India

[4] Inter Univ Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110067, India

来源：

PHYSICA B-CONDENSED MATTER | 2017年 / 518卷

关键词：

Oxides; Chemical solution deposition; Transport properties; MANGANITE-BASED HETEROSTRUCTURE; VOLTAGE CHARACTERISTICS; DEVICE CHARACTERISTICS; DIELECTRIC-PROPERTIES; YMNO3; MICROSTRUCTURE; IRRADIATION; BEHAVIOR;

D O I：

10.1016/j.physb.2017.05.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have grown p-type Y0.95Ca0.05MnO3 (YCMO) film on n-type Si substrate using chemical solution deposition (CSD) technique. To understand the structural properties of the YCMO/Si junction, X-ray diffraction (XRD) technique was used while surface morphology was analyzed by atomic force microscopy (AFM) which indicates granular growth of the YCMO film. To understand the transport properties across the junction, current-voltage (I-V) characteristics have been studied at different temperatures in the range from 150 to 300 K. Log I-V characteristics show a good rectifying behavior of the junction throughout the temperature range studied. Different models have been used to explore the conduction mechanism governing the charge transport across the junction. Effect of temperature on rectifying ratio and its correlations with I-V curves has been discussed in detail.

引用

页码：33 / 38

页数：6

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