Picosecond differential transmission measurements on porous silicon

被引：0
作者：
Hipwell, MC
Tien, CL
Mao, XL
Russo, RE
机构：
[1] Univ Calif Berkeley, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Lab, Berkeley, CA USA
来源：
MICROSCALE THERMOPHYSICAL ENGINEERING | 1998年 / 2卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
In this work, differential transmission measurements are made to characterize the short-time-scale optical properties of p-type light-emitting porous silicon. Aged and freshly etched samples are used to determine the impact of aging on the nonlinear optical properties. Two-component photo-induced absorption is observed in both types of samples. A model that considers porous silicon's unique properties of confinement, high surface area, and disorder on several length scales is presented to explain the experimental results.
引用
收藏
页码：87 / 99
页数：13
相关论文
共 50 条
[31]   PICOSECOND ELECTRON-DRIFT MOBILITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J].
SCHIFF, EA ;
DEVLEN, RI ;
GRAHN, HT ;
TAUC, J ;
GUHA, S .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1911-1913
[32]   Electron time-of-flight measurements in porous silicon [J].
Rao, P ;
Schiff, EA ;
Tsybeskov, L ;
Fauchet, PM .
ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 :613-618
[33]   Lifetime measurements of stain etched and passivated porous silicon [J].
Guerrero-Lemus, R ;
Ben-Hander, FA ;
Ballif, C ;
Kenanoglu, A ;
Borchert, D ;
Hernández-Rodríguez, C ;
Rodríguez, T ;
Martínez-Duart, JM .
AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 :753-758
[34]   New EXAFS measurements by XEOL and TEY on porous silicon [J].
Daldosso, N ;
Rocca, F ;
Dalba, G ;
Fornasini, P ;
Grisenti, R .
JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) :169-172
[35]   New EXAFS measurements by XEOL and TEY on porous silicon [J].
Daldosso, Nicola ;
Rocca, Francesco ;
Dalba, Giuseppe ;
Fornasini, Paolo ;
Grisenti, Rolly .
Journal of Porous Materials, 2000, 7 (01) :169-172
[36]   Scattering rings as a tool for birefringence measurements in porous silicon [J].
Oton, CJ ;
Ghulinyan, M ;
Gaburro, Z ;
Bettotti, P ;
Pavesi, L ;
Pancheri, L ;
Gialanella, S ;
Capuj, NE .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) :6334-6340
[37]   Gas detection by photoluminescence and electrical measurements in porous silicon [J].
Baratto, C ;
Comini, E ;
Faglia, G ;
Sberveglieri, G ;
Di Francia, G ;
De Filippo, F ;
La Ferrara, V ;
Quercia, L ;
Lancellotti, L .
TECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS, 1998, :544-546
[38]   Measurements of adsorption strain in porous silicon by Raman scattering [J].
Ferrara, M. A. ;
Sirleto, L. ;
Messina, G. ;
Donato, M. G. ;
Santangelo, S. ;
Rendina, I. .
THIRD EUROPEAN WORKSHOP ON OPTICAL FIBRE SENSORS, 2007, 6619
[39]   New EXAFS Measurements by XEOL and TEY on Porous Silicon [J].
Nicola Daldosso ;
Francesco Rocca ;
Giuseppe Dalba ;
Paolo Fornasini ;
Rolly Grisenti .
Journal of Porous Materials, 2000, 7 :169-172
[40]   Measurements of adsorption strain in porous silicon by Raman scattering [J].
Ferrara, Maria Antonietta ;
Messina, Giacomo ;
Donato, Maria Grazia ;
Sirleto, Luigi ;
Rendina, Ivo .
PRIME 2006: 2ND CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONIC AND ELECTRONICS, PROCEEDINGS, 2006, :409-412
12345