Piezoelectric Properties of Lead-Free (Na,Bi)TiO3-BaTiO3 (001) Epitaxial Thin Films around the Morphotropic Phase Boundary

被引:36
作者
Harigai, Takakiyo [1 ]
Tanaka, Yoshiaki [1 ]
Adachi, Hideaki [1 ]
Fujii, Eiji [1 ]
机构
[1] Panasonic Corp, Adv Technol Res Labs, Kyoto 6190237, Japan
关键词
TEMPLATED GRAIN-GROWTH; CERAMICS;
D O I
10.1143/APEX.3.111501
中图分类号
O59 [应用物理学];
学科分类号
摘要
The piezoelectric properties and the crystallographic nature of (1 - x)(Na,Bi)TiO3-xBaTiO(3) (NBT-BT) thin films around the morphotropic phase boundary (MPB) composition (x 0: 05 {0: 10) were studied. NBT-BT thin films were grown epitaxially on Pt(100)/MgO(100) substrates by RF magnetron sputtering and exhibited highly (001)-oriented single-phase perovskite with a tetragonal structure. A maximum piezoelectric coefficient e(31) of -14.4 C/m(2) was obtained at the x = 0.07 composition of the tetragonal side near MPB (x 0: 06). These results indicate that NBT-BT thin films around the MPB are a promising lead-free replacement for Pb(Zr,Ti)O-3 (PZT) based applications. (C) 2010 The Japan Society of Applied Physics
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页数:3
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