Design of a V-band low noise amplifier for passive millimeter wave imaging application

被引：6

作者：

Gong, Jianhao ^{[1
]}

Chen, Xi ^{[1
]}

Hu, Anyong ^{[1
]}

Miao, Jungang ^{[1
]}

机构：

[1] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2022年 / 126卷

基金：

中国国家自然科学基金;

关键词：

V-band; LNA; Wideband; Flat gain; Low noise figure; 0; 15?m GaAs pHEMT; SWITCHABLE LNA; BANDWIDTH; SECURITY;

D O I：

10.1016/j.mejo.2022.105491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a design methodology for wideband low noise amplifier (LNA) with flat gain and low noise figure (NF). A parallel RC network loaded stub circuit is proposed to enhance simultaneous noise and impedance matching. Moreover, the same structure is applied to compensate for transistor gain roll-off with frequency. By properly selecting the stub lengths for different stages, flat gain and low NF are obtained in wideband. The method is verified by designing a V-band 4-stage LNA based on 0.15 mu m GaAs pHEMT process. The LNA features 15.2 dB average gain within 45-61 GHz bandwidth. In the required band of 51-57 GHz, the LNA achieves flat gain of 14.9 +/- 0.3 dB and low NF of 2.6-4.2 dB. It consumes 30 mA current from 3 V supply and occupies area of 2 mm x 1.3 mm. Although the LNA is inherently multipurpose design, it is particularly suited for passive millimeter wave imaging due to its characteristic of high sensitivity.

引用

页数：8

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