Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

被引：4

作者：

Jiang, Yifan ^{[1
]}

Sung, Woongje ^{[2
]}

Baliga, Jayant ^{[1
]}

Wang, Sizhen ^{[1
]}

Lee, Bongmook ^{[1
]}

Huang, Alex ^{[1
]}

机构：

[1] North Carolina State Univ, FREEDM Syst Ctr, Raleigh, NC 27695 USA

[2] SUNY Albany, Polytech Inst, CNSE, Albany, NY 12203 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 02期

基金：

美国国家科学基金会;

关键词：

Silicon carbide; high voltage; Schottky barrier height; high-temperature electrical performance;

D O I：

10.1007/s11664-017-5812-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the study of the fabrication and characterization results of 10-kilo-volt (kV) 4H-SiC merged PiN/Schottky rectifiers. A metal contact process was developed to make the Schottky contact on n-type SiC and ohmic contact on p-type SiC at the same time. The diodes with different Schottky contact width were fabricated and characterized for comparison. With the improvement quality of the Schottky contact and the passivation layer, the devices show low leakage current up to 10 kV. The on-state characteristics from room temperature to elevated temperature (423 K) were demonstrated and compared between structures with different Schottky contact width.

引用

页码：927 / 931

页数：5

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