Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)

被引：2

作者：

Akpinar, Omer ^{[1
]}

Bilgili, Ahmet Kuersat ^{[2
]}

Ozturk, Mustafa Kemal ^{[1
]}

Ozcelik, Sueleyman ^{[1
]}

机构：

[1] Gazi Univ, Photon Res Ctr, TR-06500 Ankara, Turkey

[2] Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 08期

关键词：

Al; AlGaN; GaN; Hall measurements; Phonon scattering; HEMT; MOMENTUM RELAXATION; ENERGY; BULK;

D O I：

10.1007/s00339-020-03810-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, a Al (0.3) Ga (0.7) N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (rho), Hall mobility (mu) and carrier density (n) are measured in 0.01-0.14 T magnetic field range and 25-340 K temperature range. Also, scattering mechanisms effecting electron mobility are discussed. Resistivity analyses are presented by depending on resistivity measurements.

引用

页数：5

共 16 条

[1]

Akpinar Ö, 2020, J POLYTECH, V23, P687

[2] Energy and momentum relaxation of hot electrons in GaN/AlGaN [J].