A novel self-aligned bottom gate poly-Si TFT with in-situ LDD

被引：14

作者：

Zhang, SD ^{[1
]}

Han, RQ

Chan, MSJ

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 08期

关键词：

bottom gate; LDD; self-aligned structure; thin flim transistor;

D O I：

10.1109/55.936354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lithography independent self-aligned bottom gate thin film transistor (SABG-TFT) technology is proposed and experimentally demonstrated. The unique feature of the technology is the formation of self-aligned and symmetrical lightly doped source/drain (LDD) structure without any additional photolithographic or implantation steps. Thus, the number of masks used in the technology is the same as that in a conventional top gate TFT technology. Moreover, devices formed by the proposed method have thick source/drain and a thin channel region for providing low source/drain resistance and improved IV characteristics, P-channel TFT devices are fabricated using a simple low temperature (less than or equal to 600 degreesC) process, The fabricated SABG-TFT exhibits symmetrical transfer characteristics when the polarity of source/drain bias is reversed. The effective mobility and on-off current ratio of the devices are about 35 cm(2)/V-s and 6 x 10(6) respectively.

引用

页码：393 / 395

页数：3

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