Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

被引：38

作者：

Chen, Wei-Ren ^{[1
]}

Chang, Ting-Chang ^{[2
,3
,4
]}

Yeh, Jui-Lung ^{[1
]}

Sze, S. M. ^{[1
]}

Chang, Chun-Yen ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

Charge storage ability - Nonvolatile nanocrystals memory;

D O I：

10.1063/1.2905812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors provided the reliability characteristics of nonvolatile nickel-silicide nanocrystal memories embedded in oxide and nitride layers for next-generation nonvolatile memory application. The charge trapping layer was deposited by sputtering a commixed target in the argon and oxygen/nitrogen ambiances, and then using a low temperature rapid thermal annealing to form nanocrystals. Transmission electron microscope clearly shows the sharpness and the density of nanocrystals. These proposed memory structures were compared for the charge storage ability, retention, and endurance. In addition, we used a simple simulation of electric field for nonvolatile nanocrystals memory to explain the advantages by using the high-k dielectric. (C) 2008 American Institute of Physics.

引用

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