All-strain based valley filter in graphene nanoribbons using snake states

被引：35

作者：

Cavalcante, L. S. ^{[1
]}

Chaves, A. ^{[1
,2
]}

da Costa, D. R. ^{[1
,3
]}

Farias, G. A. ^{[1
]}

Peeters, F. M. ^{[1
,3
]}

机构：

[1] Univ Fed Ceara, Dept Fis, Caixa Postal 6030, BR-60455760 Fortaleza, Ceara, Brazil

[2] Columbia Univ, Dept Chem, 3000 Broadway, New York, NY 10027 USA

[3] Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 07期

关键词：

ELECTRONIC-PROPERTIES; FIELD;

D O I：

10.1103/PhysRevB.94.075432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A pseudomagnetic field kink can be realized along a graphene nanoribbon using strain engineering. Electron transport along this kink is governed by snake states that are characterized by a single propagation direction. Those pseudomagnetic fields point towards opposite directions in the K and K' valleys, leading to valley polarized snake states. In a graphene nanoribbon with armchair edges this effect results in a valley filter that is based only on strain engineering. We discuss how to maximize this valley filtering by adjusting the parameters that define the stress distribution along the graphene ribbon.

引用

页数：7

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