AlInAs/GaInAs metamorphic HEMT's on GaAs substrate: From material to device

被引：15

作者：

Cordier, Y ^{[1
]}

Bollaert, S ^{[1
]}

Zaknoune, M ^{[1
]}

diPersio, J ^{[1
]}

Ferre, D ^{[1
]}

机构：

[1] Univ Lille 1, Inst Elect & Microelect Nord, UMR CNRS 9929, F-59652 Villeneuve Dascq, France

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlInAs/GaInAs heterojunctions offer a wide range of applications for electronic and optoelectronic devices. More, heterostructures grown on lattice mismatched substrates allow to extend the range of composition in the structures and to exploit enhanced properties, provided that the crystalline perfection of the layers as well as electrical quality are preserved. As an example, the development of lattice mismatched AlInAs/GaInAs High Electron Mobility Transistors on high-quality GaAs substrates (metamorphic HEMT) is of primary interest for millimeter-wave devices.

引用

页码：211 / 214

页数：4