Deep ultraviolet light-emitting diodes and photodetectors for UV communications

被引：14
作者：
Razeghi, ME [1 ]
机构：
[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
OPTOELECTRONIC INTEGRATED CIRCUITS VII | 2005年 / 5729卷
关键词：
ultraviolet; AlGaN; light-emitting diode; solar-blind photodetector; focal plane arrays; PEAK EMISSION; OPERATION;
D O I：
10.1117/12.590880
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We have obtained very short wavelength UV LEDs (lambda < 255 nm) with milliwatt level optical output powers, based on an AlGaN multiple-quantum well active region. Solar-blind photodetectors have also been fabricated with quantum efficiencies in excess of 70%. Based on these photodetectors, focal plane arrays have been fabricated.
引用
收藏
页码：30 / 40
页数：11
相关论文
共 50 条
  • [11] Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
    Yang, G. F.
    Xie, F.
    Dong, K. X.
    Chen, P.
    Xue, J. J.
    Zhi, T.
    Tao, T.
    Liu, B.
    Xie, Z. L.
    Xiu, X. Q.
    Han, P.
    Shi, Y.
    Zhang, R.
    Zheng, Y. D.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 62 : 55 - 58
  • [12] Materials and devices for flexible and stretchable photodetectors and light-emitting diodes
    Song, Jun-Kyul
    Kim, Min Sung
    Yoo, Seungwon
    Koo, Ja Hoon
    Kim, Dae-Hyeong
    NANO RESEARCH, 2021, 14 (09) : 2919 - 2937
  • [13] Materials and devices for flexible and stretchable photodetectors and light-emitting diodes
    Jun-Kyul Song
    Min Sung Kim
    Seungwon Yoo
    Ja Hoon Koo
    Dae-Hyeong Kim
    Nano Research, 2021, 14 : 2919 - 2937
  • [14] Numerical simulation of AlInGaN ultraviolet light-emitting diodes
    Kuo, Yen-Kuang
    Yen, Sheng-Horng
    Chen, Jun-Rong
    OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION III, 2006, 6368
  • [15] AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AIN/sapphire templates
    Sumiya, Shigeaki
    Zhu, Youhua
    Zhang, Jicai
    Kosaka, Kei
    Miyoshi, Makoto
    Shibata, Tomohiko
    Tanaka, Mitsuhiro
    Egawa, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 43 - 46
  • [16] AlGaN-based ultraviolet light-emitting diodes: challenges and opportunities
    Usman, Muhammad
    Malik, Shahzeb
    Munsif, Munaza
    LUMINESCENCE, 2021, 36 (02) : 294 - 305
  • [17] Growth of deep UV light emitting diodes by metalorganic chemical vapor deposition
    Yasan, A
    McClintock, R
    Mayes, K
    Shiell, D
    Darvish, SR
    Kung, P
    Razeghi, M
    QUANTUM SENSING AND NANOPHOTONIC DEVICES, 2004, 5359 : 400 - 414
  • [18] Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes
    Kuo, Yen-Kuang
    Chen, Fang-Ming
    Chang, Jih-Yuan
    Huang, Man-Fang
    Liou, Bo-Ting
    Shih, Ya-Hsuan
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2020, 56 (01)
  • [19] Tunneling Enhanced Structure for Improving the Performance of Ultraviolet Light-emitting Diodes
    Wu, Jinxing
    Li, Peixian
    Zhou, Xiaowei
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20 (06) : 552 - 557
  • [20] On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
    Li, Luping
    Zhang, Yonghui
    Xu, Shu
    Bi, Wengang
    Zhang, Zi-Hui
    Kuo, Hao-Chung
    MATERIALS, 2017, 10 (10)
12345