Deep ultraviolet light-emitting diodes and photodetectors for UV communications

被引：14

作者：

Razeghi, ME ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

OPTOELECTRONIC INTEGRATED CIRCUITS VII | 2005年 / 5729卷

关键词：

ultraviolet; AlGaN; light-emitting diode; solar-blind photodetector; focal plane arrays; PEAK EMISSION; OPERATION;

D O I：

10.1117/12.590880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We have obtained very short wavelength UV LEDs (lambda < 255 nm) with milliwatt level optical output powers, based on an AlGaN multiple-quantum well active region. Solar-blind photodetectors have also been fabricated with quantum efficiencies in excess of 70%. Based on these photodetectors, focal plane arrays have been fabricated.

引用

页码：30 / 40

页数：11

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