Deep ultraviolet light-emitting diodes and photodetectors for UV communications

被引：14
|
作者：
Razeghi, ME [1 ]
机构：
[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
OPTOELECTRONIC INTEGRATED CIRCUITS VII | 2005年 / 5729卷
关键词：
ultraviolet; AlGaN; light-emitting diode; solar-blind photodetector; focal plane arrays; PEAK EMISSION; OPERATION;
D O I：
10.1117/12.590880
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We have obtained very short wavelength UV LEDs (lambda < 255 nm) with milliwatt level optical output powers, based on an AlGaN multiple-quantum well active region. Solar-blind photodetectors have also been fabricated with quantum efficiencies in excess of 70%. Based on these photodetectors, focal plane arrays have been fabricated.
引用
收藏
页码：30 / 40
页数：11
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