Effect of Ar addition on uniformity of diamond growth by using microwave plasma chemical vapor deposition

被引：15

作者：

Yamada, Hideaki ^{[1
]}

Chayahara, Akiyoshi ^{[1
]}

Mokuno, Yoshiaki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr ADPERC, Diamond Mat Team, I-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan

来源：

关键词：

SINGLE-CRYSTAL DIAMOND; SCHOTTKY-BARRIER DIODE; SUBSTRATE-TEMPERATURE; SCD GROWTH; CVD; NITROGEN; VOLTAGE; FIELD; REACTOR; REGIME;

D O I：

10.1016/j.diamond.2018.05.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crystal diamond was grown over inch size area by using microwave plasma chemical vapor deposition with introduction of Argon. Increase of the growth rate was confirmed by Ar addition under various gas pressures. Improvement of the uniformity of the substrate temperature as well as the growth rate was observed by introducing Ar; over 40% non-uniformity was reduced to < 10% without sacrificing the absolute magnitude of the growth rate over 1.5 in. area under some optimized condition. However, distributions of the temperature do not entirely correspond to that of the growth rate. Numerical simulations indicate differences between the major radicals, which have relatively higher concentrations, in the cases with and without the Ar addition. These results suggest that the importance of the hydrocarbon radicals with many lone pair electrons rather than CH3 to explain the growth rate uniformity.

引用

页码：143 / 148

页数：6

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